BDY26C Datasheet and Replacement, Transistor Equivalent . . . bdy26 pdf isc Silicon NPN Power Transistor BDY26DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 180V (Min ) (BR)CEOCollector-Emitter Saturation Voltage-: V )= 0 6V (Max)@ I = 2ACE (sat CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for LF signal powe amplifier
بانكيت 45×120سم - BDY26 التفاصيل: الخامات: قماش جلد مقلوب-قطيفة - خشب ام دي اف مدعم بالموسكي او الكونترالمقاسات: العرض 120سم- العمق 45سم- الإرتفاع 45سمالتوصيل: خلال 10- 15 يوم عملSKU: BDY26
Microsoft Word - 183T2-184T2-185T2-A-B-C - Electols Information furnished is believed to be accurate and reliable However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use Data are subject to change without notice Comset Semiconductors makes no warranty, representation or guarantee regarding the