IRF530N Datasheet (PDF) - International Rectifier Part #: IRF530N Download File Size: 212Kbytes Page: 8 Pages Description: Power MOSFET (Vdss=100V, Rds (on)=90mohm, Id=17A) Manufacturer: International Rectifier
IRF530NS_LPbF. pmd - Infineon Technologies Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area
IRF530N (S,L)PbF Datasheet by Infineon Technologies efficient and reliable device for use in a wide variety of applications die sizes up to HEX-4 It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package The mount application The through-hole version (IRF530NL) is available for low-profile applications Parameter Max Units
Power MOSFET - Vishay Intertechnology Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W
IRF530NS - Infineon Technologies 100V Single N-Channel IR MOSFET in a D2-Pak package Unfortunately, your browser does not support embedded frames (iframes): You can view the embedded page here
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irf530n. p65 - farnell. com Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area
N-channel TrenchMOS(TM) transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’
PD -9. 1353 IRFI530N - irf. com Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area