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- Thermal Characterization of Ultrathin MgO Tunnel Barriers
ABSTRACT: Magnetic tunnel junctions (MTJs) with ultrathin MgO tunnel barriers are at the heart of magnetic random-access memory (MRAM) and exhibit potential for spin caloritronics applications due to the tunnel magneto-Seebeck efect However, the high programming current in MRAM can cause substantial heating which degrades the endurance and reliability of MTJs
- C--04 High on off ratio ( gt;10) ferroelectric tunnel junctions . . .
Abstract We have investigated ultrathin ferroelectric HfO2 for demonstrating high performance ferroelectric tunnel junctions With the decrease in HfO2 thickness below 5 nm, ferroelectricity was reduced gradually, while the tunneling current was exponentially enhanced We found an optimum thickness to enhance rather high on off ratio (>10), keeping a sufficient tunneling current To further
- Cryogenic-temperature Grain-to-grain Epitaxial Growth of High . . .
Cryogenic-temperature Grain-to-grain Epitaxial Growth of High-quality Ultrathin CoFe Layer on MgO Tunnel Barrier for High-performance Magnetic Tunnel
- Magnetic Tunnel Junctions Based on Ferroelectric Hf0. 5Zr0. 5O2 . . .
The achievement of switchable ferroelectric polarization in ultrathin films has opened up possibili-ties for ferroelectric tunnel junctions (FTJs) [2–5] Polar-ization switching of the ferroelectric barrier in a FTJ results in a change of the tunneling conductance, which is known as the tunnel electroresistance (TER) effect
- Large Tunnel Electroresistance with Ultrathin Hf lt;sub gt;0. 5 lt; sub . . .
Hafnia-based ferroelectric tunnel junctions (FTJs) hold great promise for nonvolatile memory and emerging data storage applications In this article, a large tunnel electroresistance efect with ultrathin Hf0 5Zr0 5O2 (HZO) barrier based FTJs is reported Robust ferroelectricity is achieved with ≈1 nm films by stabilizing the rhombohedral polar phase of HZO (R-HZO) through a large compressive
- Tailoring tunnel magnetoresistance by ultrathin Cr and Co . . .
We report on systematic ab initio investigations of Co and Cr interlayers embedded in Fe 001 MgO Fe 001 magnetic tunnel junctions, focusing on the changes in the electronic structure and the transport properties with interlayer thickness The results of spin-dependent ballistic transport calculations reveal options to specifically manipulate the tunnel magnetoresistance ratio The resistance
- Intrinsic variations of ultrathin hafnium oxide-based . . .
Intrinsic variations of ultrathin hafnium oxide-based ferroelectric tunnel junctio artificial neural network, due to their fully complementary-metal-oxide-semiconductor com-patibility and advanced thickness scalability [1] The ferro-electric tunnel junction (FTJ) devel
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