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- Copper Metal for Semiconductor Interconnects - IntechOpen
Copper (Cu) had been used to replace aluminum (Al) as an interconnecting conductor in order to reduce the resistance In this chapter, the deposition method of Cu films and the interconnect fabrication with Cu metallization are introduced
- Copper Metal for Semiconductor Interconnects - IntechOpen
Resistance-capacitance (RC) delay produced by the interconnects limits the speed of the integrated circuits from 0 25 mm technology node Copper (Cu) had been used to replace aluminum (Al) as an interconnecting conductor in order to reduce the resistance
- Metallization Layers in Semiconductor Chips: Aluminum vs. Copper
Copper boasts lower specific resistance than pure aluminum (approximately a factor of 2) and significantly reduces electromigration, accommodating higher current densities and enabling the design of smaller interconnects The adoption of copper, however, comes with its share of challenges
- Copper interconnects - Wikipedia
Copper interconnects are used in integrated circuits to reduce propagation delays and power consumption Since copper is a better conductor than aluminium, ICs using copper for their interconnects can have interconnects with narrower dimensions, and use less energy to pass electricity through them Together, these effects lead to ICs with
- All About Interconnects - Semiconductor Engineering
A potential alternative being studied is a new type of “self-forming” barrier that reacts with and forms on the dielectric surface adjacent to the copper line, which allows more room for copper Also, new liners made of cobalt and ruthenium are being developed to replace tantalum
- Deposition Technologies of Materials for Cu-Interconnects
Copper interconnect requires depositions of thin films mostly for (i) the copper seed layer, (ii) the copper blanket for interconnecting lines, (iii) the barrier layer, (iv) low -K dielectric materials, and (v) a cap layer passivation layer
- Advanced Metrology for Copper Low-? Interconnects - MIT
electrical resistance than aluminum, gives a significant boost to interconnect performance Copper was first introduced in leading-edge chips in 1998, and is rapidly being adopted by all major manufacturers for high-end products
- METALLIZATION, INTERCONNECTS - Massachusetts Institute of Technology
Damascene process for deposition: does not require etching Make trenches, deposit plating base, then fill with electrodeposition and polish surface The vias can be made simultaneously in a dual-damascene process Al can also be deposited by a damascene process (sputter and reflow to fill trenches) polish Cu dielectric barrier
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