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- Helium release and diffusion mechanism in SiC containing B4C
Diffusion constant (closed symbols) and activation energy of helium diffusion (open symbols) in neutron-irradiated SiC containing B 4 C of different 10 B concentrations, at 750–1060 °C
- (PDF) Experimental determination of intragranular helium diffusion . . .
In this study, the diffusion characteristics of ion-implanted He in B4C (500 keV, fluences from 1 x 10⁺¹³ to 2 x 10⁺¹⁵ He cm⁻²) were investigated mainly by Thermo-Desorption Spectroscopy (TDS)
- Helium apparent diffusion coefficient and trapping mechanisms in . . .
Results presented in this paper contribute to a better understanding of helium diffusion in B4C and of the influence of the initial microstructure They are complementary of results dealing with helium cluster nucleation and growth [15]
- Helium release and diffusion mechanism in SiC containing B 4C
An increased number of defects in SiC containing higher 10 B concentration is thought to cause the lower rate of helium diffusion due to increased helium trapping
- Helium release and diffusion mechanism in Si C containing B4C
Diffusion des atomes excités dans les mélanges de gaz rares avec l'hélium - Interaction of Ne (3s), Ar (4s), Kr (5s), Xe (6s) with He
- Helium behavior in implanted B4C boron carbide - 15418
The neutron absorption reactions on the 10B isotope lead to the formation of high quantities of helium, which result to swelling and micro-cracks induced by the formation of high pressure bubbles The first steps of the formation of these clusters and the diffusion of the gas are not well known
- Helium release and diffusion mechanism in SiC containing B4C of . . .
Semantic Scholar extracted view of "Helium release and diffusion mechanism in SiC containing B4C of different 10B concentrations" by T Yano et al
- Helium apparent diffusion coefficient and trapping mechanisms in . . .
In a recent paper, we have identified the trapping sites for helium, grain boundaries and damaged zones In this paper, we propose the determination of an apparent diffusion coefficient for helium 3 He implantations then annealing were performed in B 4C samples of different grain sizes
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