BF410D by NXP Semiconductors | RF Small Signal Field Effect . . . Find the best price and distributors for BF410D by NXP Semiconductors; N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3 W; No of Elements: 1; Maximum Operating Temperature: 150 Cel; Partstack is the best source for BF410D to find datasheets, and compare prices and alternatives
BF410D Datasheet (PDF) - NXP Semiconductors BF410D Datasheet (HTML) - NXP Semiconductors BF410D Product details DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range These FETs can be supplied in four IDSS groups Special features are the low feedback capacitance and the low noise
BF410D datasheet - BF410A to D; N-channel Silicon Field . . . BF410D BF410A to D; N-channel Silicon Field-effect Transistors Product specification File under Discrete Semiconductors, SC07 December 1990 DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range
BF410 Datasheet (PDF) - Siemens Semiconductor Group Part #: BF410 Download File Size: 54Kbytes Page: 3 Pages Description: LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS Manufacturer