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- Multistate magnetic tunnel junction based on a single two-dimensional . . .
Motivated by the determination of stripy intralayer antiferromagnetic order and the exceptional ambient stability of two-dimensional (2D) Cr O Cl, we here propose a single-basement magnetic tunnel junctions (MTJs) composed of 2D intralayer antiferromagnets and predict the spin-resolved transport properties represented by Ag Cr O Cl Ag MTJs
- Van der Waals Multiferroic Tunnel Junctions | Nano Letters
Here, using first-principles calculations, we explore spin-dependent transport properties of van der Waals (vdW) MFTJs which consist of two-dimensional (2D) ferromagnetic Fe n GeTe 2 (n = 3, 4, 5) electrodes and 2D ferroelectric In 2 Se 3 barrier layers
- Electric field tunable multi-state tunnel magnetoresistances in 2D van . . .
Magnetic tunnel junction (MTJ) based on van der Waals (vdW) magnetic layers has been found to present excellent tunneling magnetoresistance (TMR) property, which has great potential applications in field sensing, nonvolatile magnetic random access memories, and spin logics
- Large and multistate magnetoresistance in 2D van der Waals . . . - Springer
Here, using first-principles calculations, we address these issues by designing a Fe 3 GaTe 2 α-In 2 Se 3 Fe 3 GaTe 2 multiferroic tunnel junction (MFTJ) We demonstrate large TMR values exceeding 10 5 %, nonvolatile multistate and RA product below 1 Ω µm 2, which matched the requirements for high-density memory cells
- Physical Review Journals
@article{PhysRevApplied 22 014017, title = {Multistate magnetic tunnel junction based on a single two-dimensional van der Waals antiferromagnet}, author = {Yang, Jie and Wu, Baochun and Zhao, Sichun and Liu, Shiqi and Lu, Jing and Li, Shunfang and Yang, Jinbo}, journal = {Phys Rev Appl }, volume = {22}, issue = {1}, pages = {014017}, numpages
- Realization of the electric-field driven “one-material”-based magnetic . . .
Here, we propose a new elegant approach for the realization of the “one-material”-based magnetic tunnel junction Several layers of 2D van der Waals MnPX 3 (X: S, Se), which are insulating antiferromagnetic in their ground state, are used and the applied external electric field leads to the conversion of the outermost layers of the MnPX 3
- Multistate magnetic tunnel junction based on a single two-dimensional . . .
We report the observation of a very large negative magnetoresistance effect in a van der Waals tunnel junction incorporating a thin magnetic semiconductor, CrI3, as the active layer
- Multistate magnetic tunnel junction based on a single two-dimensional . . .
Using ab initio quantum-transport simulations, four different resistance states are demonstrated in 2D Cr O Cl -based MTJs with the magnetic order of Cr O Cl evolving from antiferromagnetism, followed by different metamagnetic arrangements and, finally, to ferromagnetism
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