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- Synthesis of gallium phosphide quantum dots with high photoluminescence . . .
High photoluminescence (PL) quantum yields of 35–40% with a full width at half maximum (FWHM) of 75 nm were achieved in the green emission region In addition, the green-emission GaP QDs were applied as a color-conversion material for optical devices with UV and blue LED chips
- A review of gallium phosphide nanophotonics towards omnipotent . . .
Gallium phosphide (GaP) has been increasingly prioritized, fueled by the enormous demands in visible light applications such as biomedical and quantum technologies GaP has garnered tremendous attention in nanophotonics thanks to its high refractive
- Integrated gallium phosphide nonlinear photonics - Nature
A scalable solution involving direct wafer-bonding of high-quality, epitaxially grown gallium phosphide to low-index substrates is introduced
- Direct Band Gap Wurtzite Gallium Phosphide Nanowires
Gallium phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the green emission efficiency Band structure calculations have predicted a direct band gap for wurtzite GaP
- Enhanced photoluminescence of gallium phosphide by surface plasmon . . .
We report here enhanced photoluminescence (PL) from GaP, an indirect band gap semiconductor, by metallic Au and Ag nanoparticles The metallic Au and Ag nanoparticles were sputtering-coated onto GaP followed by heat treatment
- Investigation of Photoluminescence and Raman Emission of Porous Gallium . . .
Abstract: This article presents a study of porous gallium phosphode (GaP) utilizing photoluminescence (PL) and Raman spectroscopy, followed by its synthesis by electrochemical etching The investigation identifies a blue shift in the PL peak, indicative of quantum confinement phenomena, and spectral confirmation of structural integrity through
- Gallium Phosphide - Springer
Gallium phosphide is a semiconductor of the III-V type, with the same type of crystal structure as silicon, but with gallium and phosphorus atoms on adjacent sites Because of its detailed band structure, which is characterised by an indirect band-gap, it is quite different electrically from gallium arsenide, and
- Gallium Phosphide - LSU
Gallium phosphide is commercially one of the most promising III-V semiconductor because of its application to opt-electronics due to wide band gap and thermal stability A wide variety of theroetical and experimental works have given detailed information about the physical properties of the material
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