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- Two-Dimensional Ferroelectricity in a Single-Atom Adsorbed BiI3 . . .
Using first-principles calculations, we demonstrate that the 2D BiI 3 monolayer adsorbed by Pd single atoms (denoted as Pd@BiI 3) is a stable ferroelectric material, which possesses six equivalent ferroelectric states with different electric polarization directions These findings provide a potential route to achieve multi-state 2D
- 单原子吸附 BiI3 单层中的二维铁电性,The Journal of . . .
Using first-principles calculations, we demonstrate that the 2D BiI3 monolayer adsorbed by Pd single atoms (denoted as Pd@BiI3) is a stable ferroelectric material, which possesses six equivalent ferroelectric states with different electric polarization directions
- Two-dimensional ferroelectricity in a single-element bismuth . . . - Nature
Here, we report the observation of a single-element ferroelectric state in a black phosphorus-like bismuth layer 3, in which the ordered charge transfer and the regular atom distortion between
- Ferroelectric Bi3. 25La0. 75Ti3O12 Films of Uniform a-Axis . . . - Science
Ferroelectric bismuth-layered perovskite films are being studied for use as nonvolatile digital memories Polycrystalline films, such as SrBi 2 Ta 2 O 9 (SBT) and La-substituted Bi 4 Ti 3 O 12, including Bi 3 25 La 0 75 Ti 3 O 12 (BLT) , are of great interest in part because of their high fatigue endurance
- mp-22849: BiI3 (trigonal, R-3, 148)
BiI3 is Bismuth triodide structured and crystallizes in the trigonal R-3 space group The structure is two-dimensional and consists of three BiI3 sheets oriented in the (0, 0, 1) direction Bi3+ is bonded to six equivalent I1- atoms to form edge-sharing BiI6 octahedra
- 2D (NH4)BiI3 enables non-volatile optoelectronic memories for . . . - Nature
Here, we synthesize a dielectric 2D photoconductive material, (NH 4)BiI 3, which has high density of states (DOS), low EB, and long τ0 simultaneously
- Dielectric engineering for improvement of mobility and photoelectric . . .
Two-dimensional (2D) bismuth triiodide (BiI 3) has been emerging as a potential layered material for optoelectronic applications due to its air stability and high atomic density Although much effort has been devoted to improvements of carrier mobility, conductivity and photoelectric response, performance is still very limited
- (PDF) Realizing Improved Thermoelectric Performance in BiI3 Doped . . .
Originating mainly from the low lattice thermal conductivity (κl) caused by vast planar cation vacancy defects, Sb2Te3 alloyed Sb2Te3 (GeTe)17 (Ge17Sb2Te20) samples are able to realize peak ZT
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