Modeling the failure of silicon carbide under high strain-rate . . . In this work, we have investigated the influence of experimental parameters on the high strain rate deformation of silicon carbide ceramic during SHPB tests using FE simulations and the following conclusions can be drawn from the results
Mechanical Behavior of Silicon Carbide Under Static and Dynamic . . . Stress–strain curves confirmed the occurrence of plastic deformation under dynamic compression, and dislocations were identified from TEM studies of fractured pieces Furthermore, JH2 model was used to simulate SHPB tests, with parameters calibrated against the experimental results
Molecular Dynamics Modeling of Uniaxial Compression and Stretching of . . . Establishing the relationship between the strain strength characteristics of the crystal and its piezoelectric constants it is possible to identify the most interesting from the point of view of silicon carbide lattice polytypia for applications in piezoelectric ceramics
Strain rate sensitivity of the tensile strength of two silicon carbides . . . In this work, shockless spalling tests have been performed on two silicon carbide grades at strain rates ranging from 10 3 to 10 4 s −1 using a high-pulsed power generator These spalling tests characterize the tensile strength strain rate sensitivity of each ceramic grade
Modeling structural and mechanical properties of amorphous silicon carbide Several analysis tools within MAPS platform were used to characterize the a-SiC structural properties The Young’s moduli were computed on the initial linear part of the stress strain curve using MAPS mechanical properties analysis