TagoreTech Explore our portfolio of high-power RF switches, GaN power transistors, amplifiers, and low-noise front-end solutions, complete with evaluation boards, design support, and direct contact to our global engineering and sales teams
High Power RF GaN Switches - Tagore | DigiKey - Digi-Key Electronics Tagore’s high power RF GaN switches are fully integrated with a controller making the switch easy-to-use with using either a 3 3 V or 5 0 V supply These 10 W to 30 W CW broadband switches are capable of handling high peak power (up to 100 W peak) compared to GaAS and SOI based switches while still delivering low insertion loss and high
Tagore Introduces New High-Power GaN SPDT Switches Tagore Technology Inc , a pioneer of high-power GaN-based RF switches, announced the introduction of the TS8728N and TS8729N asymmetrical reflective single-pole two throw (SPDT) switches designed for broadband, high-power switching applications
Tagore launches high-power GaN SPDTs for broadband switching The new feature-rich switches offer what is claimed to be best-in-class insertion loss, power handling, high linearity, and high isolation performance and are well suited for L- and S-band radar and cellular infrastructure applications
TAGORE TECHNOLOGY TRUSTED GAN™ - theta-j. com Fail-Safe Switch 32Pin 5x5mm QFN Data Sheets at https: tagoretech com page php?page-id=10 ** TS7226K is a symmetric switch All others here are asymmetric Tx to Rx
Tagoretech - Our Technology TagoreTech offers innovative solutions based on Gallium Nitride-on-Silicon (GaN-on-Si), Gallium Nitride (GaN)-on-silicon carbide (SiC) and Gallium Arsenide technologies Leveraging wide bandgap capabilities, our proprietary technologies significantly reduce complexity, size and power consumption in a wide variety from 5G infrastructure to
Wide-Bandgap Tech Forms Basis for RF Switches, LNAs, PAs Its lineup of 2nd-generation GaN RF switches and hybrid modules are intended to facilitate high-power system design The devices assist designers in efforts to achieve high switching performance, low noise figures, and high integration densities in their RF front-end architectures
TS72421K SP4T 10W 60Wp RF GaN Switch - tagoretech. net TS72421K SP4T 10W 60Wp RF GaN Switch Active Features Frequency Range 700MHz to 3 8GHz Independently controlled 4 GPIO control lines; 1 GPIO for each switch throw; Every throw can be independently controlled; Low insertion loss: 0 45dB @ 1 0GHz; 0 60dB @ 2 0GHz; 1 30dB @ 3 8GHz (matched) High isolation:
Tagore Introduces GaN-on-Si SP4T Antenna Tuning RF Switch The new reflective open Single Pole Four Throw (SP4T) switch is designed with Tagore's second-generation Gallium Nitride - Silicon (GaN-Si) process The TS63421K is ideal for antenna or filter tuning applications where high RF peak voltage handling is desired
Tagore Introduces New High-Power GaN SPDT Switches With Up To 550 W . . . Tagore Technology Inc , a pioneer of high-power GaN-based RF switches, today announced the introduction of the TS8728N and TS8729N asymmetrical reflective single-pole two throw (SPDT) switches designed for broadband, high-power switching applications